Semiconductor device including capacitor

Details Semiconductor device including capacitor Semiconductor device including capacitor

2005-09-27

2005-09-27

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S307000, C257S308000, C257S309000

Reexamination Certificate

active

06949786

ABSTRACT:
A semiconductor device is obtained that can prevent occurrence of a shape defect of a capacitor electrode in the semiconductor device or operation failure of the semiconductor device. A semiconductor device with the capacitor includes a second interlayer insulation film, an SC poly plug, a barrier metal and an SN electrode. The second interlayer insulation film has a through hole. The SC poly plug is formed within the through hole of the second interlayer insulation film. The barrier metal is formed on the SC poly plug. The SN electrode is formed on the barrier metal. The SN electrode is electrically connected to the SC poly plug with the barrier metal interposed therebetween. The barrier metal is a multilayer film including three layers of a tantalum nitride (TaN) film, a titanium nitride (TiN) film and a titanium (Ti) film.

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