Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-04-05
2005-04-05
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S753000, C257S761000, C257S763000, C257S765000, C257S774000
Reexamination Certificate
active
06876078
ABSTRACT:
A structure includes a diffusion barrier layer pattern, a conductive layer pattern, an adhesion layer pattern, and a tantalum nitride layer pattern that are sequentially stacked over a semiconductor substrate. According to the method of forming the structure, a tantalum nitride layer is formed by using a PVD, CVD, or ALD process and patterned to form a tantalum nitride layer pattern. The structure and the method prevents process failures such as ring defects, simplifies associated processes, and allows relatively easy exposure of only an anti-refractive layer when forming a via hole in the structure.
REFERENCES:
patent: 5741626 (1998-04-01), Jain et al.
patent: 6638810 (2003-10-01), Bakli et al.
patent: 11-340228 (1999-10-01), None
English language of Abstract for Japanese Patent Publication No. 11-340228.
Choi Gil-Heyun
Choi Kyung-In
Kim Byung-Hee
Flynn Nathan J.
Forde Remmon R.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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