Method of forming metal line in semiconductor device...

Details Method of forming metal line in semiconductor device... Method of forming metal line in semiconductor device...

2005-03-22

2005-03-22

Chaudhuri, Olik (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000, C438S638000, C438S648000, C438S656000, C438S675000

Reexamination Certificate

active

06869871

ABSTRACT:
Provided is a method of forming a metal line in a semiconductor device. According to the present invention, a barrier metal layer, a Zr film, and a Cu thin film is sequentially formed in insides of a dual damascene pattern comprising via holes and trenches. Then, a Zr film is formed on the Cu thin film, and Zr is allowed to be diffused into crystal particles of Cu and interfaces between the crystal particles by carrying out a heat treatment process thereto, so that uniform Cu (Zr) bonds are formed regardless of a depth. As a result, an EM resistance characteristic of the Cu thin film even in narrower and deeper via holes can be improved, and thus reliability of process and an electrical characteristic of a device can be also improved.

REFERENCES:
patent: 6184121 (2001-02-01), Buchwalter et al.
patent: 6303498 (2001-10-01), Chen et al.
patent: 6649522 (2003-11-01), Farrar

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