Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-29
2005-03-29
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S057000, C438S662000, C438S940000, C427S585000, C427S596000
Reexamination Certificate
active
06872649
ABSTRACT:
A light emitting-layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation. Particularly, the method involves placing a substrate in a vacuum chamber, placing a target of the film material in the chamber, introducing oxygen into the chamber, laser-irradiating the target to emit atoms or molecular ions by ablation, and then depositing and oxidizing the atoms or ions to grow the transparent conductor film.
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Matsubara Hideki
Nakamura Takao
Fasse W. F.
Fasse W. G.
Louie Wai-Sing
Pham Long
Sumitomo Electric Industries Ltd.
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