Low-activation energy silicon-containing resist system

Details Low-activation energy silicon-containing resist system Low-activation energy silicon-containing resist system

2005-09-06

2005-09-06

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S311000, C430S313000, C430S314000

Reexamination Certificate

active

06939664

ABSTRACT:
Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.

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Machine translation of JP11-302382.
“Determination of coupled acid catalysis-diffusion processes in a positive-tone chemically amplified photoresist” Houle et al. Journal Vac. Sci. Technology B 18 (4) Jul./Aug. 2000, ppgs. 1874-1885.
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