Solid-state image sensing device having pixels with barrier...

Details Solid-state image sensing device having pixels with barrier... Solid-state image sensing device having pixels with barrier...

2005-04-26

2005-04-26

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257S234000, C257S258000, C257S290000, C257S291000, C257S461000, C257S462000

Reexamination Certificate

active

06885047

ABSTRACT:
A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

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