Method of improving the top plate electrode stress inducting...

Details Method of improving the top plate electrode stress inducting... Method of improving the top plate electrode stress inducting...

2005-03-15

2005-03-15

Zarneke, David A. (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

06867129

ABSTRACT:
A method for fabricating a capacitor with overlying transistor without stress-induced voids is described. A capacitor stack is provided overlying a substrate. A stress-balancing dielectric layer is deposited overlying the stack. An anti-reflective coating (ARC) layer is deposited overlying the stress-balancing layer. The stack is patterned to form the capacitors. Gate transistors are formed overlying the capacitors wherein the stress-balancing layer prevents formation of stress-induced voids during the thermal processes involved in forming the gate transistors.

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