Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-04-26
2005-04-26
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S702000, C257S081000, C257S099000
Reexamination Certificate
active
06885099
ABSTRACT:
Reduction of parasitic capacitance originated between semiconductor chip and optical chip by reducing the connection distance thereof by means of interlayer-connecting the semiconductor chip mounted on a surface of a resin layer and the optical chip buried on another surface of the resin layer with an interlayer via.
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patent: 6121675 (2000-09-01), Fukamura et al.
patent: 6605828 (2003-08-01), Schwarzrock et al.
patent: 6617702 (2003-09-01), Hsu et al.
patent: 20040214380 (2004-10-01), Leib et al.
Clark Jasmine
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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