Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-26
2005-07-26
Tan, Vibol (Department: 2819)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S357000, C361S111000, C361S056000, C326S081000, C326S121000
Reexamination Certificate
active
06921950
ABSTRACT:
In order to improve the robustness against electrostatic discharge, when power source terminal and ground terminal are open, of a semiconductor device having a first, a second and a third inverter that are connected in a cascade arrangement, the semiconductor device is provided not only with a first input protection circuit for guiding positive electrostatic discharges, that are applied from outside to a signal input terminal, to a power source line, and a second input protection circuit for guiding negative electrostatic discharges, that are applied from outside to the signal input terminal, to a ground line, but also an internal protection circuit for guiding electrostatic discharges that have been guided by the first input protection circuit to the power source line and flow from a P-channel MOS transistor in the second inverter towards the third inverter, to the ground line.
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Kinugasa Norihide
Tatehara Kenichi
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Tan Vibol
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