Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-01-11

2005-01-11

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C365S104000

Reexamination Certificate

active

06841827

ABSTRACT:
Information is not written in through channel dope, but through the difference of ions implanted into the impurity region of a semiconductor layer. Each memory element has a pair of the thin film transistors. The memory element with “1” written on it and the memory element with “0” written on it are differentiated based on whether the thin film transistors of the pair belongs to the same conductivity type or different conductivity types. Also, when the write-in impurity region is formed adjacent the impurity region, it is possible to differentiate the memory elements based on whether a diode connected to the thin film transistor in series is formed or not. Since these elements can be produced without the ion-implantation through the gate electrode, it is possible to build a mask ROM on the glass substrate. Also, it is possible to differentiate the memory elements based on whether wiring contact holes are formed in the thin film transistor or not. This invention enables the formation of the memory element on the glass substrate to fabricate a mask ROM.

REFERENCES:
patent: 4128773 (1978-12-01), Troutman et al.
patent: 5640040 (1997-06-01), Nakagawa et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5856689 (1999-01-01), Suzawa
patent: 6518594 (2003-02-01), Nakajima et al.

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