Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-07-12
2005-07-12
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S073000, C438S151000, C438S197000
Reexamination Certificate
active
06916691
ABSTRACT:
A method of fabricating a thin film transistor array substrate is provided. First, a first patterned metallic layer, a dielectric layer, an amorphous silicon layer, a second patterned metallic layer and a passivation layer are sequentially formed over a substrate. A patterned photoresist layer is formed over the passivation layer. The patterned photoresist layer at least covers the source/drain (formed out of the first patterned metallic layer) as well as the area beside them. The edges of the patterned photoresist layer have a plurality of thin-out regions. Each thin-out region stretches across part of the edge of one source/drain. Thereafter, using the patterned photoresist layer as an etching mask, an etching operation is carried out until the source/drain and its peripheral amorphous silicon layer under the thin-out regions are exposed to form a plurality of staircase structures. Finally, a plurality of pixel electrodes is formed over the substrate to cover the respective staircase structures and electrically connect to one source/drain electrode.
REFERENCES:
patent: 4715930 (1987-12-01), Diem
Au Optronics Corporation
Jianq Chyun IP office
Le Thao P.
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