Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-17
2005-05-17
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S780000
Reexamination Certificate
active
06894342
ABSTRACT:
According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The at least one memory cell may be, for example, a SONOS flash memory cell. The structure further comprises an interlayer dielectric layer situated over at least one memory cell and over the substrate. The structure further comprises a first antireflective coating layer situated over the interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises a second antireflective coating layer situated directly over the first anti reflective coating layer. Either the first antireflective coating layer or second antireflective coating layer must be a silicon-rich layer. The first antireflective coating layer and the second antireflective coating may form a UV radiation blocking layer having a UV transparency less than approximately 1.0 percent, for example.
REFERENCES:
patent: 5721167 (1998-02-01), Subramanian et al.
patent: 5985517 (1999-11-01), Tanaka et al.
patent: 6410210 (2002-06-01), Gabriel
patent: 6548423 (2003-04-01), Plat et al.
Cheng Ning
Ghandehari Kouros
Hui Angela
Ngo Minh V.
Park Jae-yong
Farjami & Farjami LLP
Le Thao P.
Spansion LLC
LandOfFree
Structure and method for preventing UV radiation damage in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure and method for preventing UV radiation damage in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for preventing UV radiation damage in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3417418