Ferroelectric capacitor and ferroelectric memory

Details Ferroelectric capacitor and ferroelectric memory Ferroelectric capacitor and ferroelectric memory

Filed on

2005-01-04

Date issued

2005-01-04

Examiner

Wojciechowicz, Edward (Department: 2815)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S296000, C257S301000, C257S305000

Type

Reexamination Certificate

Status

active

Patent number

06838718

Description

ABSTRACT:
A ferroelectric memory comprising a select transistor and a ferroelectric capacitor is characterized in that the ferroelectric capacitor includes a dummy capacitor and a memory capacitor the first electrodes (storage node electrodes) of which are connected to one of the source and drain of the select transistor and which draw the same hysteresis curve, the second electrodes of the dummy capacitor and the memory capacitor are connected to a first plate line and a second plate line, and the potentials of these plate lines are set so as to polarize the dummy capacitor and the memory capacitor in opposite directions to each other with respect to the first electrode.

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patent: WO 9912210 (1999-03-01), None
Hiroshi Ishiwara: “Proposal of a Novel Ferroelectric-Gate Field Effect Transistor With Separated Functions for Data Read-Out and Data Storage”; Extended Abstracts of the International Conference on Solid State Devices and Materials, Japan Society Applied Physics, Sep. 1998 (19998-09) XP-000823151; pp. 222-223.

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