Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-03-29
2005-03-29
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000
Reexamination Certificate
active
06873546
ABSTRACT:
A ferromagnetic memory cell is disclosed. The cell includes a bit (10), made of a ferromagnetic material, having a remnant polarity. The cell also includes a read drive line (20) coupled to a first portion of the bit (10), to feed a current into the bit (10). A sense conductor (30) is coupled to a second portion of the bit (10), to receive the current from the bit (10). The current conducted through the bit (10) is responsive to the polarity of the bit (10). A method is also disclosed for determining the magnetic polarity of a ferromagnetic bit (10). In this method, a bit (10) is provided that is made of ferromagnetic material and has a remnant polarity. An input current (50) is fed into the bit (10) through a read drive line (20) coupled to a first portion of the bit (10). An output current (60) is received from the bit (10) through a sense conductor (30) coupled to a second portion of the bit (10). The current conducted through the bit (10) is responsive to the polarity of the bit (10). A variance between the input current (50) and output current (60) is then sensed, from which the magnetic polarity of the bit (10) is determined.
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Jones Waldo Holbrook & McDonough
Phung Anh
Winder Brent T.
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