Thin film transistor and method of manufacturing the same

Details Thin film transistor and method of manufacturing the same Thin film transistor and method of manufacturing the same

Filed on

2005-03-01

Date issued

2005-03-01

Examiner

Quach, T. N. (Department: 2814)

Patent Class

Semiconductor device manufacturing: process

SubClass

Formation of semiconductive active region on any substrate

SubSubClass

On insulating substrate or layer

Other Related Categories

C438S166000, C438S482000, C438S486000

Type

Reexamination Certificate

Status

active

Patent number

06861338

Description

ABSTRACT:
A metal element typified by Ni has an adverse effect on device properties of a TFT, and consequently, a step for removing the elements (hereinafter referred to as a gettering step) has been carried out. However, gettering steps as described above have the disadvantage of high cost due to an increase in the number of steps. Accordingly, a manufacturing method of a crystalline semiconductor film, which does not require a gettering step, has been in demand. A TFT of the present invention is characterized by reducing the concentration of the metal element, typically Ni, in the crystalline semiconductor film to less than 4×1016atoms/cm3, more specifically, 5×1015atoms/cm3to 3×1016atoms/cm3, preferably, 7×1015atoms/cm3to 3×1016atoms/cm3. And the present invention enables crystallization even by the metal element with a low concentration and an omission of a gettering step.

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