Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-09-13
2005-09-13
Chaudhuri, Olik (Department: 2824)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S958000, C438S778000
Reexamination Certificate
active
06943125
ABSTRACT:
Provided is a method for manufacturing a semiconductor device including a plurality of different semiconductor elements with a transistor for fabricating the semiconductor device formed on a semiconductor substrate, an interlayer insulation film formed all over the upper part, and a hole trap site formed in the interlayer insulation film for preventing a mobile ion like H or moisture from penetrating, whereby it can be prevented that a leakage current increases abnormally where the voltage difference (Vgs) is lower than a threshold voltage.
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Choi Jae Hoon
Lee Ga Won
Lee Jae Hee
Om Jae Chul
Park Sung Wook
Chaudhuri Olik
Hynix / Semiconductor Inc.
Luhrs Michael K.
Marshall & Gerstein & Borun LLP
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