Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S341000
Reexamination Certificate
active
06878999
ABSTRACT:
Segmented transistor devices are provided, wherein contiguous individual transistor segments extend along corresponding segment axes, in which two or more of the segment axes are at a non-zero angle with respect to one another. The segmentation of the transistor provides a high overall device aspect ratio which may be easily fit into pre-existing circuit blocks or cells in a device layout, thereby facilitating device scaling.
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“Experimental and Theoretical Analysis of Energy Capability of Resurf LDMOSFETs and Its Correlation with Static Electrical Safe Operating Area (SOA)”, Vishnu Khemka, Vijay Parthasarathy, Ronghua Zhu, Amitava Bose and Toss Roggenbauer, IEEE Transactions on Electron Devices, vol. 49, No. 6, Jun. 2002, pp. 1049-1058.
Hower Philip L.
Jensen Steven L.
Lin John
Pendharkar Sameer
Brady III Wade James
Pham Long
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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