Selective deposition of solder ball contacts

Details Selective deposition of solder ball contacts Selective deposition of solder ball contacts

2005-01-18

2005-01-18

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S637000, C438S119000

Reexamination Certificate

active

06844253

ABSTRACT:
Methods of forming solder ball contacts having dimensions of approximately 2.5 microns in diameter for use in C4-type connections. The methods form solder ball contacts using selective deposition of solder on metal contact pads of a device. The metal contact pads have exposed portions at the bottom of through holes. The through holes define the dimensions of the exposed portions of the metal contact pads, and serve to limit the dimensions of the resulting solder contact by limiting the area upon which deposition preferentially occurs. Subsequent reflow of the deposited solder forms a solder ball contact. Various devices, modules, systems and other apparatus utilizing such methods of forming solder ball contacts.

REFERENCES:
patent: 3959047 (1976-05-01), Alberts et al.
patent: 4273859 (1981-06-01), Mones et al.
patent: 4650548 (1987-03-01), Strube et al.
patent: 4661375 (1987-04-01), Thomas
patent: 4789648 (1988-12-01), Chow et al.
patent: 4790912 (1988-12-01), Holtzman et al.
patent: 4982267 (1991-01-01), Mones et al.
patent: 5240878 (1993-08-01), Fitzsimmons et al.
patent: 5457345 (1995-10-01), Cook et al.
patent: 5461257 (1995-10-01), Hundt
patent: 5642261 (1997-06-01), Bond et al.
patent: 5693572 (1997-12-01), Bond et al.
patent: 5736789 (1998-04-01), Moscicki
patent: 5885891 (1999-03-01), Miyata et al.
patent: 5973340 (1999-10-01), Mohsen
Anonymous, “Combination Process for Final Metal Lines and Metal Terminals”, Kenneth Mason Publications Ltd, Research Disclosure No. 342, England, 1, (Oct. 1992).
Anonymous, “Process for High Density of Chip Terminals on Large Wafers”, Kenneth Mason Publications Ltd, Research Disclosure No. 02, England, 1, (Feb. 1993).
ASM International, “Packaging”, ASM International Electrotronic Materials Handbook vol. 1, 301 and 440p.
Marcotte, V.C., et al., “Review of Flip Chip Bonding”, Proceedings of the 2nd ASM International Electronic Materials and Processing Congress Apr. 24-28, 1989, Philadelphia, PA, 73-81, (1989).
Pfeiffer, L., et al., “Self-Aligned Controlled Collapse Chip Connect (SAC4)”, Journal of the Electrochemical Society, vol. 134, No. 11, 2940-2941, (Nov. 1987).
Ryan, J.G., et al., “Technology Challenges for Advanced Interconnects”, 1-5 p.
Bohr, M.T., “Interconnect Scaling—The Real Limiter to High Performance ULSI”,IEEE, pp. 241-244, (1995).
Davis, J., et al., “A Priori Wiring Estimations and Optimal Multilevel Wiring Networks for Portable ULSI Systems”,Electronic Components and Technology Conference, pp. 1002-1008, (1996).
Gwennap, L., “IC Makers Confront RC Limitations, IBM Leads Move to Copper Interconnects; TI Deploys Low-k Dielectic”,Microdesign Resources, Microprocessor Report, pp. 14-18, (Aug. 1997).
Kaanta, C., et al., “Dual Damascene: A ULSI Wiring Technology”,VMIC Conference, 144-152, (Jun. 1991).
Lakshminarayana, S., “Multilevel Dual Damascene Copper Interconnections”, Rensselaer Polytechnic Institute, Ph.d Thesis, pp. 1-205, (1997).
Licata, T., et al., “Dual Damascene AL Wiring for 256M DRAM”,VMIC Conference, 596-602, (Jun. 1995).
Luther, B., et al., “Planar Copper-Polyimide Back end of the Line Interconnections for ULSI Devices”,1993 Proceedings 10th International VLSI Multilevel Interconnection Conference, pp. 15-21, (1993).
Ryan, J.G., et al., “The evolution of interconnection technology at IBM”,IBM J. Res. Develop., 39(4), pp. 371-381, (1995).
Singer, P., “New Interconnect Materials: Chasing the Promise of Faster Chips”,Semiconductor International, pp. 52-56, (1994).
Taur, Y., et al., “CMOS scaling into the 21st century 0.1 micrometer and beyond”,IBM J. Res. Develop., 39(1/2), pp. 245-260, (1995).
Vollmer, B., et al., “Recent advances in the application of collimated sputtering”,Thin Solid Films, 247, pp. 104-111, (1994).

Affiliated with

Also associated with

Rating

Selective deposition of solder ball contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective deposition of solder ball contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective deposition of solder ball contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3411763