Method of manufacturing silicon carbide film

Details Method of manufacturing silicon carbide film Method of manufacturing silicon carbide film

Filed on

2005-07-19

Date issued

2005-07-19

Examiner

Zarneke, David (Department: 2829)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

C438S778000, C438S687000, C438S758000, C438S769000, C438S780000, C438S786000, C438S790000

Type

Reexamination Certificate

Status

active

Patent number

06919270

Description

ABSTRACT:
A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.

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