Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-05
2005-07-05
Baumeister, B. William (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S297000, C257S298000, C257S306000
Reexamination Certificate
active
06914283
ABSTRACT:
A semiconductor element in which the hydrogen-induced degradation of ferroelectric characteristics can be controlled includes a hydrogen penetration prevention film400for preventing hydrogen from penetrating into a ferroelectric film is formed above top electrodes28. The width of the hydrogen penetration prevention film400in the direction orthogonal to a specific direction in which the top electrodes28are arranged in a parallel manner is set to be equal to or greater than the maximum width of the top electrodes28in the orthogonal direction. The hydrogen penetration prevention film400is used as a main WL that connects sub-WL drivers60aand a main WL driver60bextended in the same direction as the specific direction in the which the top electrodes28are aligned parallel to each other in a peripheral circuit60.
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Baumeister B. William
Menz Douglas
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
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