Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-07-26
2005-07-26
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
06922351
ABSTRACT:
A ferroelectric memory device includes first electrodes, second electrodes arranged in a direction which intersects the first electrodes, and ferroelectric films disposed in at least intersecting regions of the first electrodes and the second electrodes. Capacitors formed of the first electrodes, the ferroelectric films, and the second electrodes are disposed in a matrix. A ferroelectric phase and a paraelectric phase are mixed in each of the ferroelectric films.
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Kijima Takeshi
Natori Eiji
Le Vu A.
Seiko Epson Corporation
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