Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-07-19

2005-07-19

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000

Reexamination Certificate

active

06919595

ABSTRACT:
A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes a semiconductor substrate, a transistor which is formed above the semiconductor substrate, and a TMR element which is formed on or above an interlayer dielectric film that covers the transistor of the substrate. The device also includes a first wiring line which is buried in the interlayer dielectric film and connected to a source/drain diffusion layer of the transistor, a second wiring line which is buried under the TMR element while overlying the first wiring line within the interlayer dielectric film and which is used to apply a current-created magnetic field to the TMR element during writing, and a third wiring line connected to an upper surface of the TMR element and provided to cross the second wiring line. The third wiring line is for applying a current magnetic field to the TMR element during writing and also for causing a cell current to flow during reading. The second wiring line is formed by patterning techniques so that its both edges are placed outside of a pattern of the TMR element.

REFERENCES:
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patent: 6518588 (2003-02-01), Parkin et al.
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R. Scheuerlein, et al, ISSCC 2000 / Session 7 / TD: Emerging Memory & Device Technologies / Paper TA 72, pp. 94-95, “TA 7.2: A 10NS Read and Write Non-Volatile Memory Array Using A Magnetic Tunnel Junction and Fet Switch In Each Cell”, 2000.

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