Methods of forming backside connections on a wafer stack

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Reexamination Certificate

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C438S455000, C438S622000, C438S652000, C438S666000, C438S672000

Reexamination Certificate

active

06897125

ABSTRACT:
Various methods of forming backside connections on a wafer stack are disclosed. To form the backside connections, vias are formed in a first wafer that is to be bonded with a second wafer. The vias used for the backside connections are formed on a side of the first wafer along with an interconnect structure, and the backside connections are formed on an opposing side of the first wafer using these vias.

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Kobrinksy, et al., “Method and Structure for Interfacing Electronic Devices”, U.S. Appl. No.: 10/334,172, Filed: Dec. 28, 2002, 39 pgs.

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