Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-05-31
2005-05-31
Whitmore, Stacy A. (Department: 2812)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C438S795000
Reexamination Certificate
active
06901568
ABSTRACT:
Disclosed is a method for correcting a transistor of a predetermined threshold value. According to the method, after preparing a gate13of the transistor, depending on how well the gate is prepared, a threshold voltage Vth showing transistor characteristic is corrected by adjusting an oxygen concentration of a lamp-annealing step21,which is to be performed subsequently. Moreover, disclosed is a method for fabricating a transistor of a predetermined threshold value. According to the method, after preparing the gate13of the transistor, the threshold voltage Vth showing the transistor characteristic is predicted or measured. When the threshold voltage deviates from the predetermined value, the oxygen concentration is adjusted in the lamp-annealing step21of the transistor that is to be fabricated subsequently and thus the threshold value is set to the predetermined value without lowered reliability due to the damage of the gate oxide film and without additional process steps.
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NEC Electronics Corporation
Ostrolenk Faber Gerb & Soffen, LLP
Whitmore Stacy A.
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