Method for controlling pH during planarization and cleaning...

Abrading – Abrading process – With tool treating or forming

Reexamination Certificate

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C451S041000, C451S285000, C438S692000

Reexamination Certificate

active

06913523

ABSTRACT:
A method and apparatus for processing a microelectronic substrate. In one embodiment, the method can include planarizing the microelectronic substrate with a planarizing liquid and rinsing the substrate with a rinsing liquid having a pH approximately the same as a pH of the planarizing liquid. The rinsing step can be completed while the substrate remains on a polishing pad of the apparatus, or, alternatively, the substrate can be removed to a rinsing chamber for rinsing. In another embodiment, the method can include conditioning the polishing pad by removing polishing pad material from the polishing pad and then cleaning the microelectronic substrate by engaging the substrate with the same polishing pad and moving at least one of the polishing pad and the substrate relative to the other of the polishing pad and the substrate after conditioning the polishing pad.

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Uematsu et al., “Efficient Mechanochemical Polishing for Silicon Nitride Ceramics”,NIST Spec. Publ.847 , (Machining of Advanced Materials): 409-413, 1993.

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