Semiconductor device with high permittivity gate dielectric...

Details Semiconductor device with high permittivity gate dielectric... Semiconductor device with high permittivity gate dielectric...

2005-09-06

2005-09-06

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000

Reexamination Certificate

active

06940118

ABSTRACT:
A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

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