DRAM with hidden refresh

Details DRAM with hidden refresh DRAM with hidden refresh

2005-09-06

2005-09-06

Peugh, Brian R. (Department: 2187)

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

C711S167000, C711S168000

Reexamination Certificate

active

06941415

ABSTRACT:
A synchronous DRAM is provided having specified time slots (e.g., every multiple of 4 clock pulses of a DRAM input clock) within which read or write commands may be entered on the command/address bus. During operation, the DRAM performs internally generated refresh operations on a periodic basis while avoiding collisions with controller-generated data accesses. An internal refresh cycle can be executed without interfering with any data accesses by starting the refresh after decoding a non-conflicting command in one of these time slots and finishing before the next command time slot. If an internal refresh operation is delayed (e.g., by the decoding of a conflicting access command) it will be completed at the earliest opportunity thereafter.

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“MoSys Explains 1T-SRAM Technology,” by Peter N. Glaskowsky, Microprocessor Report, vol. 13, No. 12, Sep. 13, 1999.

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