Memory cell array

Details Memory cell array Memory cell array

2005-09-06

2005-09-06

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S014000, C257S077000, C257S303000, C438S240000, C438S931000

Reexamination Certificate

active

06940123

ABSTRACT:
In a matrix-shaped configuration of memory transistors, word lines are disposed on a top side of a semiconductor body and are parallel to one another. Bit lines run transversely with respect thereto and are formed by polysilicon strips which are applied on the top side and are isolated from the semiconductor body by barrier layers functioning as diffusion barriers.

REFERENCES:
patent: 5614745 (1997-03-01), Motonami
patent: 6335238 (2002-01-01), Hanttangady et al.
patent: 42 28 679 (1993-03-01), None

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