Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-09-27
2005-09-27
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06950333
ABSTRACT:
A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.
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Hiramoto Masayoshi
Kawashima Yoshio
Matsukawa Nozomu
Odagawa Akihiro
Satomi Mitsuo
Hamre Schumann Mueller & Larson P.C.
Le Toan
Phung Anh
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