Semiconductor device

Details Semiconductor device Semiconductor device

2005-03-08

2005-03-08

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S392000

Reexamination Certificate

active

06864550

ABSTRACT:
A source electrode Vddis formed in a region between a field PMOS1and a field PMOS2as high side switches of a latch circuit. This latch circuit is utilized in the state where a lower side of one of the two high side switches is completely depleted. Field PMOS1and field PMOS2share a P+-type impurity diffusion region, an N+-type impurity diffusion region and a P+-type impurity diffusion region, which are connected to source electrode Vdd. It is therefore possible to provide a semiconductor device capable of reducing the area thereof in the direction parallel to the main surface of a semiconductor substrate.

REFERENCES:
patent: 20020000867 (2002-01-01), Daniel et al.
patent: 10-004143 (1988-01-01), None
“1200V High-Side Lateral MOSFET in Junction-Isolated Power IC Technology Using Two Field-Reduction Layers”, J.S. Ajit et al.,Proceedings of The 5th International Symposium on Power Semiconductor Devices and IC'sMay 18-20, 1993, pp 230-235.
“Self-Shielding: New High-Voltage Inter-Connection Technique for HVICs”, Tatsuhiko Fujihara et al., 1996 IEEE, pp. 231-234.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3398598