Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2005-07-12

2005-07-12

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

06917062

ABSTRACT:
A ferroelectric memory device and a method of manufacturing the memory device are provided that facilitate the formation of different types of a plurality of memories on an identical substrate.A ferroelectric memory device includes a first ferroelectric memory and a second ferroelectric memory. The first ferroelectric memory includes a first memory cell array. The second ferroelectric memory includes a second memory cell array. In the first memory cell array, memory cells are arranged in a matrix manner, and the first memory cell array includes first signal electrodes, second signal electrodes extending in the direction intersecting the first signal electrodes, and a ferroelectric layer at least between the first signal electrodes and the second signal electrodes. The second ferroelectric memory includes a different type of memory cells from that of the memory cells of the first ferroelectric memory.

REFERENCES:
patent: 5880991 (1999-03-01), Hsu et al.

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