Static information storage and retrieval – Read/write circuit – With shift register
Reexamination Certificate
2005-05-17
2005-05-17
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
With shift register
C365S189040, C365S220000, C365S230030
Reexamination Certificate
active
06894936
ABSTRACT:
A memory device and method for selectable sub-array activation. In one preferred embodiment, a memory array is provided comprising a plurality of groups of sub-arrays and circuitry operative to simultaneously write data into and/or read data from a selected number of groups of sub-arrays. By selecting the number of groups of sub-arrays into which data is written and/or from which data is read, the write and/or read data rate is varied. Such varying can be used to prevent thermal run-away of the memory array. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.
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Kleveland Bendik
Scheuerlein Roy E.
Brinks Hofer Gilson & Lione
Elms Richard
Matrix Semiconductor Inc.
Nguyen Tuan T.
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