Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-04-05
2005-04-05
Nelms, David (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S065000, C365S189020, C365S189050, C365S189090, C365S207000, C365S230030, C365S230040, C365S230060, C365S230080
Reexamination Certificate
active
06876567
ABSTRACT:
A ferroelectric memory device comprises a plurality of subarrays having a plurality of bitlines and a plurality of wordlines crossing over the bitlines. Ferroelectric material is disposed between the wordlines and the bitlines to define a ferroelectric cell at each crossing of the wordlines and bitlines. Each subarray further comprises left and right voltage converters disposed on opposite sides thereof, to drive respective first and second sets of wordlines within the subarray. A plurality of global wordlines are couple to the left and right voltage converters of each subarray and are configured to establish the drive levels for respective wordlines of the subarrays. A bitline multiplexer selectively couples the bitlines of a select subarray to a plurality of sense amplifiers.
REFERENCES:
patent: 5570319 (1996-10-01), Santoro et al.
patent: 6256262 (2001-07-01), Chen et al.
patent: 6551846 (2003-04-01), Furutani et al.
patent: 6556490 (2003-04-01), Shubat et al.
patent: 6567299 (2003-05-01), Kunikiyo et al.
patent: 20010009526 (2001-07-01), Andersen et al.
patent: 20030002315 (2003-01-01), Ooishi
patent: 20040120202 (2004-06-01), Terzioglu et al.
Safari, Ahmad; Panda, K. Rajesh; Janas, Victor F.; “Ferroelectric Ceramics: Processing, Properties & Applications” (Dept. of Ceramic Science and Engineering, Rutgers University, Piscataway NJ 08855, USA) www.rci.rutgers.edu/˜ecerg/projects/ferroelectric.html (50 pages).
Intel Corporation
Marger & Johnson & McCollom, P.C.
Nelms David
Pham Ly Duy
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