Film forming apparatus and film forming method

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C428S700000

Reexamination Certificate

active

06946406

ABSTRACT:
To provide a film forming apparatus in which an impurity contained in an organic compound is separated to be removed and a film is formed without decreasing the purity of the purified organic compound, whereby a high-purity organic compound is formed. A film forming apparatus of the present invention includes a purifying chamber for purifying an organic compound and a film forming chamber for vapor-depositing the purified organic compound onto a substrate. The organic compound purified by a zone melting method in the purifying chamber can be vapor-deposited onto the substrate provided in the film forming chamber without decreasing the purity thereof, so that a high-purity organic compound layer can be formed.

REFERENCES:
patent: 4951601 (1990-08-01), Mayden et al.
patent: 5904961 (1999-05-01), Tang et al.
patent: 6132280 (2000-10-01), Tanabe et al.
patent: 1 087 448 (2001-03-01), None
Sloan et al, Automatic Zone Refiner for Organic Compounds, Reiew of Scientific Instruments, 1962.
G.J. Sloan; “Automatic Zone Refiner for Organic Compounds”;The Review of Scientific Instruments, vol. 34, No. 1; pp. 60-62; Jan. 1963.
Y. Lupien et al.; “Preparation of High-Purity Anthracene: Zone Refining and the Triplet Lifetime”;Molecular Crystals, vol. 5, pp. 1-7; 1968.

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