Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-04-05
2005-04-05
Lam, David (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000, C365S158000
Reexamination Certificate
active
06876575
ABSTRACT:
Bit lines and source lines are precharged to a power supply voltage before data read operation. In the data read operation, a corresponding bit line is coupled to a data bus as well as a corresponding source line is driven to a ground voltage only in the selected memory cell column. In the non-selected memory cell columns, the bit lines and the source lines are retained at the precharge voltage, i.e., the power supply voltage. No charging/discharging current is produced in the bit lines of the non-selected memory cell columns, that is, a charging/discharging current that does not directly contribute the data read operation is not produced, thereby allowing for reduction in power consumption in the data read operation.
REFERENCES:
patent: 5732016 (1998-03-01), Chen et al.
patent: 6055178 (2000-04-01), Naji
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6111781 (2000-08-01), Naji
patent: 6215707 (2001-04-01), Moyer
patent: 6219273 (2001-04-01), Katti et al.
patent: 6226197 (2001-05-01), Nishimura
patent: 6349054 (2002-02-01), Hidaka
patent: 6359805 (2002-03-01), Hidaka
patent: 10-116489 (1998-05-01), None
patent: 2001-297579 (2000-10-01), None
patent: 1999-0072259 (1999-09-01), None
U.S. patent application No. 09/944,346, filed Sep. 4, 2001.
U.S. patent application No. 09/929,054, filed Aug. 15, 2001.
U.S. patent application No. 09/887,321, filed Jun. 25, 2001.
U.S. patent application No. 09/834,638, filed Apr. 16, 2001.
U.S. patent application No. 09/832,025, filed Apr. 11, 2001.
Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell,” ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129 and 409-410.
Durlam, et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements,” ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, pp. 96-97, 130-131 and 410-411.
Lam David
Renesas Technology Corp.
LandOfFree
Thin film magnetic memory device having a magnetic tunnel... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film magnetic memory device having a magnetic tunnel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film magnetic memory device having a magnetic tunnel... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3396453