Method for reducing contact impedance of thin film transistor

Details Method for reducing contact impedance of thin film transistor Method for reducing contact impedance of thin film transistor

2005-01-18

2005-01-18

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000

Reexamination Certificate

active

06844222

ABSTRACT:
The present invention relates to reduce contact impedance of a gate electrode of a thin film transistor (TFT). It employs a double layer of AlNd/Cr or AlNd/Cr silicide as a material of the gate electrode and employs plasma atmosphere to clean a contact surface of the gate electrode.

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