Memory device capable of stable data writing

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S230030, C365S189090

Reexamination Certificate

active

06947320

ABSTRACT:
A memory device according to the present invention includes a memory cell array including a plurality of memory cells arranged therein, the memory cell array being divided into a plurality of regions each selectable independently of the others as an object for data writing, and further includes a plurality of current supply sections provided correspondingly to the plurality of regions, respectively. Each of the plurality of current supply sections, when a corresponding region of the plurality of regions is selected as an object for data writing, is activated to supply a data write current to the corresponding region and each of the plurality of regions includes a plurality of write select lines provided correspondingly to predetermined units of the plurality of memory cells. The plurality of write select lines are selectively supplied with the data write current from a corresponding one of the plurality of current supply sections.

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Scheuerlein, et al. “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell” 2000 IEEE International Solid-State Circuits Conference Digest of Technical Papers (2000) TA 7.2.
Durlam, et al. “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements” 2000 IEEE International Solid-State Circuits Conference Digest of Technical Papers (2000) TA 7.3.
Naji, et al. “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM” 2001 IEEE International Solid-State Circuits Conference Digest of Technical Papers (Feb. 6, 2001) 7.6.

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