Methods of providing an interlevel dielectric layer...

Details Methods of providing an interlevel dielectric layer... Methods of providing an interlevel dielectric layer...

2005-01-18

2005-01-18

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S623000, C438S631000, C438S634000, C438S645000, C438S647000, C438S648000

Reexamination Certificate

active

06844255

ABSTRACT:
The invention comprises methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry. In one implementation, a method of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry includes forming a conductive metal interconnect layer over a substrate. An insulating dielectric mass is provided about the conductive metal interconnect layer. The insulating dielectric mass has a first dielectric constant. At least a majority of the insulating dielectric mass is etched away from the substrate. After the etching, an interlevel dielectric layer is deposited to replace at least some of the etched insulating dielectric material. The interlevel dielectric layer has a second dielectric constant which is less than the first dielectric constant.

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