Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-04-26
2005-04-26
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000
Reexamination Certificate
active
06884723
ABSTRACT:
A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes a complexing agent.
REFERENCES:
patent: 4035500 (1977-07-01), Dafter, Jr.
patent: 4297436 (1981-10-01), Kubotera et al.
patent: 4670306 (1987-06-01), Salem
patent: 4747907 (1988-05-01), Acocella et al.
patent: 4992137 (1991-02-01), Cathey, Jr. et al.
patent: 5254217 (1993-10-01), Maniar et al.
patent: 5318927 (1994-06-01), Sandhu et al.
patent: 5378492 (1995-01-01), Mashiko
patent: 5380401 (1995-01-01), Jones et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5480854 (1996-01-01), Rajaram et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5692950 (1997-12-01), Rutherford et al.
patent: 5695384 (1997-12-01), Beratam
patent: 5700383 (1997-12-01), Feller et al.
patent: 5711851 (1998-01-01), Blalock et al.
patent: 5786259 (1998-07-01), Kang
patent: 5888906 (1999-03-01), Sandhu et al.
patent: 5916855 (1999-06-01), Avanzino et al.
patent: 5935871 (1999-08-01), Farkas et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
patent: 5976928 (1999-11-01), Kirlin et al.
patent: 5981454 (1999-11-01), Small
patent: 5989988 (1999-11-01), Iinuma et al.
patent: 6015506 (2000-01-01), Streinz et al.
patent: 6039633 (2000-03-01), Chopra
patent: 6045716 (2000-04-01), Walsh et al.
patent: 6069080 (2000-05-01), James et al.
patent: 6071816 (2000-06-01), Watts et al.
patent: 6110830 (2000-08-01), Skrovan et al.
patent: 6143191 (2000-11-01), Baum et al.
patent: 6143192 (2000-11-01), Westmoreland
patent: 6149828 (2000-11-01), Vaartstra
patent: 6211034 (2001-04-01), Visokay et al.
patent: 6261157 (2001-07-01), Bajaj et al.
patent: 6278153 (2001-08-01), Kikuchi et al.
patent: 6290736 (2001-09-01), Evans
patent: 6306012 (2001-10-01), Sabde
patent: 6346741 (2002-02-01), Van Buskirk et al.
patent: 6368518 (2002-04-01), Vaartstra
patent: 6395194 (2002-05-01), Russell et al.
patent: 6436723 (2002-08-01), Tomita et al.
patent: 6451214 (2002-09-01), Westmoreland
patent: 6454957 (2002-09-01), Westmoreland
patent: 6476491 (2002-11-01), Harada et al.
patent: 6527622 (2003-03-01), Brusic et al.
patent: 6527818 (2003-03-01), Hattori et al.
patent: 6537462 (2003-03-01), Westmoreland
patent: 6589100 (2003-07-01), Moeggenborg et al.
patent: 6730592 (2004-05-01), Vaartstra
patent: 6756308 (2004-06-01), Small et al.
patent: 20010006031 (2001-07-01), Tsuchiya et al.
patent: 20010023701 (2001-09-01), Aoki et al.
patent: 20010039766 (2001-11-01), Hattori et al.
patent: 20020008265 (2002-01-01), Beitel et al.
patent: 20020017063 (2002-02-01), Beitel et al.
patent: 20020019088 (2002-02-01), Basceri et al.
patent: 20020039839 (2002-04-01), Thomas et al.
patent: 20020050322 (2002-05-01), Kunisawa et al.
patent: 20020081853 (2002-06-01), Beitel et al.
patent: 20020111026 (2002-08-01), Small et al.
patent: 20020111027 (2002-08-01), Sachan et al.
patent: 20020151177 (2002-10-01), Cherian et al.
patent: 20030119316 (2003-06-01), Klein et al.
patent: 20030119321 (2003-06-01), Uhlenbrock et al.
patent: 20030119426 (2003-06-01), Sabde
patent: 20030121891 (2003-07-01), Westmoreland
patent: 20030166337 (2003-09-01), Wang et al.
patent: 20040157458 (2004-08-01), Vaartstra
patent: 1 111 083 (2001-06-01), None
patent: 1 123 956 (2001-08-01), None
patent: 1 156 091 (2001-11-01), None
patent: 2000 200782 (2002-07-01), None
patent: WO 9806541 (1998-02-01), None
patent: WO 9836045 (1998-08-01), None
patent: WO 9927581 (1999-06-01), None
patent: WO 9953532 (1999-10-01), None
patent: WO 0031794 (2000-06-01), None
patent: WO 0077107 (2000-12-01), None
patent: WO 0144396 (2001-06-01), None
patent: WO 02084718 (2002-10-01), None
patent: WO 03056620 (2003-07-01), None
patent: WO 03059571 (2003-07-01), None
patent: WO 03060028 (2003-07-01), None
patent: WO 03060980 (2003-07-01), None
Weast et al., “CRC Handbook of Chemistry and Physics,”Chemical Rubber Publishing Company, 1989: D151-154.
Canterford et al., “Chapter 9: Rhodium and Iridium,”Halides of the Transition Elements, Halides of the Second and Third Row Transition Metals, John Wiley & Sons, New York, NY, 1968; pp. 346-357, publication page, title page (14 pages total).
DeOrnellas et al., “Challenges for Plasma Etch Integration of Ferroelectric Capacitors in FeRAM's and DRAM's,”Integrated Ferroelectrics, 1997;17:395-402.
DeOrnellas et al., “Plasma Etch of Ferroelectric Capacitors in FeRAMs and DRAMs,”Semiconductor International, Sep. 1997; pp. 103-104, 106 and 108.
Ginzburg et al.,Analytical Chemistry of Platinum Metals, John Wiley & Sons, New York, cover pg., and 14-15.
Kim et al., “Chemical Dry Etching pf Platinum Using Cl2/CO Gas Mixture,”Chem. Mater., 1998; 10:3576-3582.
Kwon et al., “Etching properties of Pt thin films by inductively coupled plasma,”J. Vac. Sci. Technol., 1998;A 16(5):2772-6.
Nakao, “Dissolution of Noble Metals in Halogen-Halide-Polar Organic Solvent Systems,”J. Chem. Soc., Chem. Commun., Mar. 1, 1992; 5:426-7.
Wilberg,Lehrbuch der Anorganischen Chemie, Walter de Gruyter, Berlin, 1985, Cover pg., and 1188.
Xu et al., “Chemical Vapor Deposition (CVD) of Iridium and Platinum Films and Gas-Phase Chemical Etching of Iridium Thin Films,”Mat. Res. Soc. Symp. Proc., 1999;541:129-139.
Webster's II, New Riverside University Dictionary, 1984: pp. 258, 842.
Klein Rita J.
Sinha Nishant
Deo Duy-Vu N.
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
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