Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-04-12
2005-04-12
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S751000, C257S752000, C257S758000, C438S760000, C174S258000, C174S256000, C428S428000, C428S446000, C428S447000, C428S448000
Reexamination Certificate
active
06879046
ABSTRACT:
A split barrier layer enables copper interconnect wires to be used in conjunction with low-k dielectric films by preventing the diffusion of N—H base groups into photoresists where they can render the photoresist insoluble. The split barrier layer is disposed between the copper and the low-k dielectric and includes a nitrogen-containing, oxygen-free film which contacts the copper, and an oxygen-containing, nitrogen-free film which contacts the low-k dielectric film. The nitrogen-containing film prevents the formation of undesirable copper oxides, and the oxygen-containing film prevents the diffusion of N—H base groups into the low-k dielectric films. The oxygen-containing film may be an oxygen-doped silicon carbide film in an exemplary embodiment. In another embodiment, a film stack of low-k dielectric films includes an etch-stop layer and hardmask each formed of oxygen-doped silicon carbide. The hardmask and etch-stop layer enable the formation of a dual-damascene opening in the film stack, and the film structure of the present invention precludes N—H base groups from diffusing from the low-k dielectric films and neutralizing acid catalysts in the photoresist used to define the dual damascene opening.
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U.S. Appl. No. 10/038,352, filed Jan. 2, 2002.
Gibson, Jr. Gerald W
Jessen Scott
Lytle Steven Alan
Steiner Kurt George
Vitkavage Susan Clay
Agere Systems Inc.
Chu Chris C.
Eckert George
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