Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-09-20
2005-09-20
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000
Reexamination Certificate
active
06946361
ABSTRACT:
The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer11is formed on a substrate and a second material layer12is formed adjacently to the foregoing first material layer11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer12.
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T. Takayama et al.,A CPU on a Plastic Film Substrate, 2004 Symposium on VLSI Technology, Digest of Technical Papers, Jun. 15, 2004, pp. 230-231.
Maruyama Junya
Takayama Toru
Yamazaki Shunpei
Ghyka Alexander
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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