Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-04
2005-01-04
Quach, T. N. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S346000, C257S389000
Reexamination Certificate
active
06838732
ABSTRACT:
To provide a semiconductor device with reduced parasitic capacity in the vicinity of gate electrodes, and a method for manufacturing such a semiconductor device. The semiconductor device comprises a gate electrode formed on a silicon semiconductor substrate1through a gate oxide film, and a pair of impurity diffusion layers formed on the surface region of the silicon semiconductor substrate at both sides of the gate electrode. A silicon nitride film acting as a sidewall spacer is formed so as to cover the sidewall of the gate electrode, and the silicon nitride film is allowed to extend to the surface of the silicon semiconductor substrate1in the vicinity of the gate electrode in a substantially L-shaped profile.
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Wolf, S., et al., Silicon Processing, vol. 1, 1986, Lattice Press, pp. 368-369.
Amishiro Hiroyuki
Igarashi Motoshige
McDermott Will & Emery LLP
Quach T. N.
Renesas Technology Corp.
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