Semiconductor memory device having flip-flop circuits

Static information storage and retrieval – Read/write circuit – Noise suppression

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Details

365210, 365154, G11C 1140

Patent

active

042913942

ABSTRACT:
A semiconductor memory device having flip-flop circuits, in which first and second bit lines are connected to each of the flip-flop circuits as a sense amplifier, the potential of the second bit line being opposite to the potential of the first bit line, and the first and second data bus lines cross perpendicularly to the first and second bit lines, respectively, the first and second dummy lines are arranged in parallel with the first and second data bus lines respectively, in order to prevent erroneous operation of an I/O amplifier connected to the first and second data bus lines.

REFERENCES:
patent: 4195357 (1980-03-01), Kuo et al.

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