Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-05-03
2005-05-03
Pascal, Robert (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
Reexamination Certificate
active
06887799
ABSTRACT:
One-transistor ferroelectric memory devices using an indium oxide film (In2O3), an In2O3film structure, and corresponding fabrication methods have been provided. The method for controlling resistivity in an In2O3film comprises: depositing an In film using a PVD process, typically with a power in the range of 200 to 300 watts; forming a film including In overlying a substrate material; simultaneously (with the formation of the In-including film) heating the substrate material, typically the substrate is heated to a temperature in the range of 20 to 200 degrees C.; following the formation of the In-including film, post-annealing, typically in an O2 atmosphere; and, in response to the post-annealing: forming an In2O3film; and, controlling the resistivity in the In2O3film. For example, the resistivity can be controlled in the range of 260 to 800 ohm-cm.
REFERENCES:
patent: 55104013 (1980-08-01), None
Hsu Sheng Teng
Li Tingkai
Curtin Joseph P.
Geyer Scott B.
Pascal Robert
Rabdau Matthew D.
Ripma David C.
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