Quantum interference type semiconductor device

Details Quantum interference type semiconductor device Quantum interference type semiconductor device

1989-08-03

1992-07-14

Hille, Rolf

357 4, 357 16, H01L 2980

Patent

active

051307669

ABSTRACT:
A quantum interference type semiconductor device is composed of at least one bifurcated branch conductive channel with a heterojunction in a semiconductor with a band discontinuity that produced a potential well between two semiconductor regions into which a carrier is injected and from which a carrier is drained, at least one gate electrode is arranged at the side of the one bifurcated branch conduction channel, and a kind of filter using a resonance tunneling barrier arranged before or upstream of the semiconductor region into which a carrier is injected. The filter passes a carrier having a certain energy legvel to the channel whereby the level of the carrier traveling in the channel becomes equal to realize a good quantum interference effect.

REFERENCES:
patent: 3643237 (1972-02-01), Anacker
patent: 4257055 (1981-03-01), Hess et al.
patent: 4525730 (1985-06-01), Beha et al.
patent: 4550330 (1985-10-01), Fowler
patent: 4704622 (1987-11-01), Capasso et al.
patent: 4733282 (1988-03-01), Chang et al.
patent: 4745452 (1988-05-01), Sollner
patent: 4780749 (1988-10-01), Schulman
patent: 4806998 (1989-02-01), Vinter et al.
patent: 4942437 (1990-07-01), Fowler et al.
patent: 4957337 (1990-09-01), Ogawa et al.
patent: 5003360 (1991-03-01), Okada et al.
Morkoc, "Observation . . . Quantum Well", Appl. Phys. Lett. 49(2), Jul. 14, 1986.
International Electron Devices Meeting, 1986, "A Novel Quantum Interference Transistor (QUIT) With Extremely Low Power-Delay Product and Very High Transconductance", by S. Bandyopadhyay et al, pp. 76-79; IEEE, New York.
IEEE Electron Device Letters, vol. EDL-6, No. 12, Dec. 1985, "Resonant Tunneling Transistors with Controllable Negative Differential Resistances", by A. R. Bonnefoi et al., pp. 636-638, IEEE, New York.
Applied Physics Letters, vol. 47, No. 12, Dec. 1985, American Institute of Physics, Woodbury, New York, "Resonant Tunneling of Two-Dimensional Electrons Through a Quantum Wire; A Negative Transconductance Device", by S. Luryi et al, pp. 1347-1349.
"Novel Interference Effects between Parallel Quantum Wells"; S. Datta et al., Physical Review Letters, vol. 5, No. 21, Nov. 18, 1985; pp. 2344-2347.
"Proposed structure for large quantum interference effects"; S. Datta et al.; Applied Physics Letter 48; Feb. 17, 1986; pp. 487-489.
"A Novel Quantum Interference Transistor (QUIT) with Extremely Low Power-Delay Product and Very High Transconductance"; S. Bandyopadbyay et al.; IEDM 1986 Tech. Dig.; pp. 76-79.

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