Semiconductor device

Details Semiconductor device Semiconductor device

2005-07-05

2005-07-05

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C527S315000, C527S315000, C527S401000, C438S212000, C438S268000

Reexamination Certificate

active

06914294

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a main surface; a semiconductor layer of a first conduction type provided on the main surface of said semiconductor substrate; a first buried layer of the first conduction type provided between said semiconductor layer and said semiconductor substrate; a first connection region of the first conduction type provided around said first buried layer, said first connection region extending from the surface of said semiconductor layer to said first buried layer; a switching element provided in the surface region of said semiconductor layer on said first buried layer; and a low breakdown-voltage element provided in a surface region of said semiconductor layer, said low breakdown-voltage element being closer to said first connection region than said switching element and having lower breakdown voltage than that of said switching element.

REFERENCES:
patent: 5146298 (1992-09-01), Eklund
patent: 5514608 (1996-05-01), Williams et al.
patent: 5912495 (1999-06-01), Depetro et al.
patent: 6288424 (2001-09-01), Ludikhuize
patent: 2002/0017697 (2002-02-01), Kitamura et al.
patent: 2002/0053695 (2002-05-01), Liaw et al.
patent: 2002-158348 (2002-05-01), None
A. W. Ludikhuize, Proceedings of the 14thInternational Symposium on Power Semiconductor Devices & ICS, pp. 301-304, “Lateral 10-15V DMOST with Very Low 6 MOHM.MM2 On-Resistance”, 2002.

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