Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-10
2005-05-10
Pert, Evan (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S211000, C438S257000
Reexamination Certificate
active
06891222
ABSTRACT:
Non-volatile memory devices and fabrication methods thereof are provided. The device includes a plurality of isolation layers formed at a semiconductor device, a plurality of stacked gates crossing over an active region between the isolation layers, and an oxidation barrier layer covering the stacked gate. Each of the stacked gates has a control gate electrode crossing over the active region, a floating gate interposed between the control gate electrode and the active region, and an inter-gate dielectric layer interposed between the control gate electrode and the floating gate. Also, the inter-gate dielectric layer has a bottom dielectric layer, an intermediate dielectric layer and a top dielectric layer which are sequentially stacked. The oxidation barrier layer is formed prior to a subsequent thermal oxidation process for curing etch damage that occurs during formation of the stacked gates.
REFERENCES:
patent: 6194784 (2001-02-01), Parat et al.
patent: 6559007 (2003-05-01), Weimer
patent: 6635530 (2003-10-01), Helm et al.
Chang Sung-Nam
Kim Dong-Chan
Marger & Johnson & McCollom, P.C.
Pert Evan
Sarkar Asok Kumar
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