Non-volatile semiconductor memory device and method of...

Details Non-volatile semiconductor memory device and method of... Non-volatile semiconductor memory device and method of...

2005-09-06

2005-09-06

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S304000, C257S316000, C257S317000, C257S315000

Reexamination Certificate

active

06940120

ABSTRACT:
A phosphorus-doped amorphous silicon film and a silicon nitride film are serially grown over a semiconductor substrate. The obtained stack is patterned so as to obtain word lines. A CVD oxide film is grown on the entire surface and then anisotropically etched to thereby form sidewalls on the lateral faces of the word lines. An ONO film previously formed just under the CVD oxide film is also removed by the etching. The semiconductor substrate is etched to thereby form a groove, where masking is effected by the silicon nitride film, silicon oxide film and sidewall. Boron ions are doped by ion implantation through the same mask into the bottom of the groove to thereby form a channel stop impurity-diffused layer. Then, an inter-layer insulating film is formed over the entire surface.

REFERENCES:
patent: 6137134 (2000-10-01), Nakagawa
patent: 6365944 (2002-04-01), Reisinger
patent: 6528843 (2003-03-01), Wu
patent: 6696724 (2004-02-01), Verhaar
Patent Abstracts of Japan, Publication No. 8-172174, dated Jul. 2, 1996.
Patent Abstracts of Japan, Publication No. 5-275716, dated Oct. 22, 1993./Discussed in the specification.

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