Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-04-05
2005-04-05
Ghyka, Alexander (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257S415000
Reexamination Certificate
active
06876048
ABSTRACT:
A micromechanical component having a substrate beneath at least one structured layer, in the structured layer at least one functional structure being formed, a cap which covers the functional structure, between the cap and the functional structure at least one cavity being formed, and a connecting layer which connects the cap to structured layer, as well as a method for producing the micromechanical component. To obtain a compact and robust component, the connecting layer is formed from an anodically bondable glass, i.e. a bond glass, which has a thickness in the range of 300 nm to 100 μm, which may in particular be in the range of 300 nm to 50 μm.
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Fischer Frank
Graf Eckhard
Hein Peter
Ghyka Alexander
Kenyon & Kenyon
Robert & Bosch GmbH
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