Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2005-03-08
2005-03-08
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C438S199000, C438S583000, C438S682000
Reexamination Certificate
active
06864126
ABSTRACT:
A method of manufacturing a semiconductor device with a transistor comprising an LDD region and a silicide layer is disclosed. The method may include forming a gate electrode on a substrate, forming a first preliminary source/drain region with shallow junction through an ion implantation process using the gate electrode as a mask, and forming a ILD pattern with contact holes on the substrate including the gate electrode, the contact holes exposing the top of the gate electrode and some part of the first preliminary source/drain region. The method may also include forming an expanded source/drain region through an ion implantation process using the ILD pattern as a mask, forming a silicide layer on the top of the gate electrode and the expanded source/drain region, and forming contact plugs by filling the contact holes with metal.
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Dongbu Electronics Co. Ltd.
Grossman & Flight LLC
Luu Chuong Anh
Smith Matthew
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